| 摘要 |
<p>PURPOSE: A substrate processing apparatus and a substrate processing method using the same are provided to improve properties of an I type layer region contiguous to an N type layer and another I type layer region contiguous to a P type layer by controlling an amount of oxygen provided when the I type layer is formed. CONSTITUTION: A substrate support unit(200) supports a substrate(S) while being arranged inside a chamber(100). A raw material injection unit(300) faces the substrate support unit and injects a process raw material. The raw material injection unit includes a raw material injection part(310), a raw material supply member(320), and a driving part(330). A raw material supply unit(400) supplies a plurality of process raw materials to the raw material injection unit. A power supply unit(500) supplies power for producing plasma to the raw material injection unit.</p> |
