发明名称 Storage device and information rerecording method
摘要 A storage device that improves ability of adjusting a resistance value level in recording and enables stable verification control is provided. VWL supplied from a second power source to a control terminal of a transistor is increased (increase portion: &Dgr;VWL) for every rerecording by verification control by a WL adjustment circuit. In the case where a variable resistive element is able to record multiple values, &Dgr;VWL is a value variable for every resistance value level of multiple value information. That is, &Dgr;VWL is a value variable according to magnitude relation of a variation range of recording resistance of the variable resistive element due to a current. In the region where the variation range of the recording resistance is large (source-gate voltage VGS of the transistor is small), &Dgr;VWL is small, while in the region where the variation range of the recording resistance is small (VGS is large), &Dgr;VWL is large.
申请公布号 US8213214(B2) 申请公布日期 2012.07.03
申请号 US20080747413 申请日期 2008.12.11
申请人 TSUSHIMA TOMOHITO;SHIIMOTO TSUNENORI;YASUDA SHUICHIRO;SONY CORPORATION 发明人 TSUSHIMA TOMOHITO;SHIIMOTO TSUNENORI;YASUDA SHUICHIRO
分类号 G11C11/00 主分类号 G11C11/00
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