发明名称 |
Nonvolatile semiconductor memory, method for reading out thereof, and memory card |
摘要 |
A nonvolatile semiconductor memory includes: a memory cell unit including a plurality of memory cells having an electric charge accumulation layer and a control electrode, said memory cells being electrically connected in series; a plurality of word lines, each of which is electrically connected to said control electrode of said plurality of memory cells; a source line electrically connected to said memory cells at one end of said memory cell unit; a bit line electrically connected to said memory cells at the other end of said memory cell unit; and a control signal generation circuit, which during a data readout operation staggers a timing for selecting the word line connected to said memory cells of said memory cell unit from a timing for selecting a non-selected word line connected to a non-selected memory. |
申请公布号 |
US8213232(B2) |
申请公布日期 |
2012.07.03 |
申请号 |
US201113210431 |
申请日期 |
2011.08.16 |
申请人 |
IWAI MAKOTO;WATANABE YOSHIHISA;KABUSIKI KAISHA TOSHIBA |
发明人 |
IWAI MAKOTO;WATANABE YOSHIHISA |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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