发明名称 Nonvolatile semiconductor memory, method for reading out thereof, and memory card
摘要 A nonvolatile semiconductor memory includes: a memory cell unit including a plurality of memory cells having an electric charge accumulation layer and a control electrode, said memory cells being electrically connected in series; a plurality of word lines, each of which is electrically connected to said control electrode of said plurality of memory cells; a source line electrically connected to said memory cells at one end of said memory cell unit; a bit line electrically connected to said memory cells at the other end of said memory cell unit; and a control signal generation circuit, which during a data readout operation staggers a timing for selecting the word line connected to said memory cells of said memory cell unit from a timing for selecting a non-selected word line connected to a non-selected memory.
申请公布号 US8213232(B2) 申请公布日期 2012.07.03
申请号 US201113210431 申请日期 2011.08.16
申请人 IWAI MAKOTO;WATANABE YOSHIHISA;KABUSIKI KAISHA TOSHIBA 发明人 IWAI MAKOTO;WATANABE YOSHIHISA
分类号 G11C16/04 主分类号 G11C16/04
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