发明名称 |
Method of forming a metal layer pattern having a nanogap and method of manufacturing a molecule-sized device using the same |
摘要 |
A method of patterning a metal layer includes forming a first mask on a surface of the metal layer, the first mask having an opening through the first mask that exposes the metal layer, and forming a nanogap in the exposed metal layer using an ion beam directed through the opening. The first mask limits a lateral extent of the ion beam, and the nanogap has a width that is less than a width of the opening. |
申请公布号 |
US8211322(B2) |
申请公布日期 |
2012.07.03 |
申请号 |
US20080149388 |
申请日期 |
2008.04.30 |
申请人 |
PARK DONG-GUN;KIM DONG-WON;LEE SUNG-YOUNG;CHOI YANG-KYU;KIM CHANG-HOON;KIM JU-HYUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK DONG-GUN;KIM DONG-WON;LEE SUNG-YOUNG;CHOI YANG-KYU;KIM CHANG-HOON;KIM JU-HYUN |
分类号 |
C23F1/00 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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