发明名称 Substrate treating apparatus and method for manufacturing semiconductor device
摘要 A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.
申请公布号 US8211798(B2) 申请公布日期 2012.07.03
申请号 US20110929444 申请日期 2011.01.25
申请人 OZAKI TAKASHI;SUZAKI KENICHI;HITACHI KOKUSAI ELECTRIC INC. 发明人 OZAKI TAKASHI;SUZAKI KENICHI
分类号 H01L21/44;C23C16/44;C23C16/458;H01L21/00;H01L21/673 主分类号 H01L21/44
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