发明名称 Non-volatile memory device
摘要 An electronic memory device includes at least one basic unit, which is configured as a memory cell for storing at least one bit of information. The basic unit includes a vacuum cavity for free charge carriers propagation therethrough, a region of charge carriers emission or entry into the vacuum cavity, an anode electrode which are kept under controllable voltage conditions, and at least one floating gate electrode accommodated in a path of the free charge carriers propagating through the vacuum cavity between the emission or entry region and the anode. The floating gate electrode serves for storing therein a charge indicative of the at least one bit of information.
申请公布号 US8213239(B2) 申请公布日期 2012.07.03
申请号 US20060064165 申请日期 2006.08.17
申请人 HALAHMI EREZ;DIAMANT GILAD;RAVON TAMAR;BEN-AZAR NERY;LEVY JEFFREY;NAAMAN RON;NOVATRANS GROUP SA 发明人 HALAHMI EREZ;DIAMANT GILAD;RAVON TAMAR;BEN-AZAR NERY;LEVY JEFFREY;NAAMAN RON
分类号 G11C16/04 主分类号 G11C16/04
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