| 摘要 |
A method for removing a etch residue (e.g., polymer or particle) from a semiconductor structure and using a cleaning chemistry and the composition of the chemistry is described. By providing a semiconductor structure with etch residue on it, the semiconductor substrate is then placed in a chemistry to remove the particle, wherein the chemistry comprises dilute hydrofluoric acid and a carboxylic acid. In one embodiment the carboxylic acid is selected from tartaric acid, acetic acid, citric acid, glycolic acid, oxalic acid, salicyclic acid, or phthalic acid, and the dilute hydrofluoric acid is approximately 0.1 weight % of hydrofluoric acid. |
