发明名称 Polycrystalline silicon solar cell having high efficiency and method for fabricating the same
摘要 Disclosed herein is a method of forming a light-absorbing layer of a polycrystalline silicon solar cell, including: forming a polycrystalline silicon layer on a back electrode; forming an intrinsic amorphous silicon layer on the polycrystalline silicon layer; and heat-treating the transparent insulating substrate to vertically crystallize the intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through a metal induced vertical crystallization (MIVC) process to form the intrinsic amorphous silicon layer into a light-absorbing layer made of polycrystalline silicon, and is a method of fabricating a high-efficiency polycrystalline silicon solar cell using the light-absorbing layer.
申请公布号 US8211738(B2) 申请公布日期 2012.07.03
申请号 US20090355078 申请日期 2009.01.16
申请人 JOO SEUNG KI;YOO HYEONG SUK;KIM YOUNG SU;SNU R&DB FOUNDATION 发明人 JOO SEUNG KI;YOO HYEONG SUK;KIM YOUNG SU
分类号 H01L21/00 主分类号 H01L21/00
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