发明名称 |
Polycrystalline silicon solar cell having high efficiency and method for fabricating the same |
摘要 |
Disclosed herein is a method of forming a light-absorbing layer of a polycrystalline silicon solar cell, including: forming a polycrystalline silicon layer on a back electrode; forming an intrinsic amorphous silicon layer on the polycrystalline silicon layer; and heat-treating the transparent insulating substrate to vertically crystallize the intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through a metal induced vertical crystallization (MIVC) process to form the intrinsic amorphous silicon layer into a light-absorbing layer made of polycrystalline silicon, and is a method of fabricating a high-efficiency polycrystalline silicon solar cell using the light-absorbing layer. |
申请公布号 |
US8211738(B2) |
申请公布日期 |
2012.07.03 |
申请号 |
US20090355078 |
申请日期 |
2009.01.16 |
申请人 |
JOO SEUNG KI;YOO HYEONG SUK;KIM YOUNG SU;SNU R&DB FOUNDATION |
发明人 |
JOO SEUNG KI;YOO HYEONG SUK;KIM YOUNG SU |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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