OXIDE SEMICONDUCTOR INVERTER USING DEPLETION MODE OF DUAL GATE THIN FILM TRANSISTOR

摘要

PURPOSE: An oxide semiconductor inverter using the depletion mode of a dual gate TFT(Thin Film Transistor) is provided to obtain high gains by forming a depletion load structure without the addition of a process and the structure by using a threshold voltage shift. CONSTITUTION: A gate electrode(21) is formed on a substrate(20). A gate insulating layer(22) is formed on the gate electrode. An active layer(23) is formed on the gate insulating layer. An etch stopper(24) is formed on the upper center of the active layer. A source electrode(25) and a drain electrode(26) are formed to be spaced on the active layer.