| 摘要 |
PURPOSE: A semiconductor device is provided to highly integrate a CMOS(Complementary Metal Oxide Semiconductor) inverter circuit by constituting the CMOS inverter circuit by using a single columnar structure. CONSTITUTION: A columnar structure is composed of P type silicon(102), N type silicon(104), and oxide(116). Oxide is arranged between the P type silicon and the N type silicon and extended in a vertical direction to a substrate. N-type silicon layers(134, 122) having high concentration are arranged on the top and bottom of the P-type silicon. P-type silicon layers(136, 124) having high concentration are arranged on the top and bottom of the N-type silicon. An insulation material surrounds the P-type silicon, the N-type silicon, and the oxide and serves as a gate insulator. A conductor(128) surrounds the insulator and serves as a gate electrode.
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