FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a semiconductor device is provided to prevent characteristic deterioration of a single channel with a phosphorous ion and an injected diffusion barrier material. CONSTITUTION: A gate insulating layer(210), a gate(200), and a source/drain(300) are formed on a substrate. A phosphorous ion and a diffusion barrier material are inserted in the formed source/drain. The diffusion barrier material is injected by injecting at least one of a carbon ion or a carbon cluster material. A dose supplementary material is injected by injecting an arsenic ion.