| 摘要 |
PURPOSE: A characteristic analyzing method and a manufacturing method of a resistance alteration memory device are provided to eliminate fault within an oxide thin film by annealing the oxide thin film over 300°C under oxygenation. CONSTITUTION: An absorption spectrum is formed by irradiating an x-rays to a resistance alteration memory device. A fault within the resistance alteration memory device is judged from free edge peak of the absorption spectrum. A fault within the resistance alteration memory device is judged by additionally monitoring the change of intensity of Gaussian peak by applying a Jahn-Teller effect to first peak of the absorption spectrum. A TiO2 thin film which is laminated on a TiN metal electrode is annealed to the temperature of 300°C to 600°C under oxygenation. |
