PROCESS AND INSTALLATION FOR DEPOSITING FILMS ONTO A SUBSTRATE

摘要

The process comprises introducing or rolling a substrate in a reaction chamber (6) in which two electrodes (4, 10) are placed, where a dielectric barrier is positioned between the electrodes, generating a high frequency voltage to generate a plasma (12) between the electrodes, operating an adjustable inductor (L) arranged in parallel with own installation inductor generating voltage to reduce the phase difference between voltage and the generated current, and introducing a mixture (8) of which the composition is contacting the plasma into the reaction chamber. The process comprises introducing or rolling a substrate in a reaction chamber (6) in which two electrodes (4, 10) are placed, where a dielectric barrier is positioned between the electrodes, generating a high frequency voltage to generate a plasma (12) between the electrodes, operating an adjustable inductor (L) arranged in parallel with own installation inductor generating voltage to reduce the phase difference between voltage and the generated current, introducing a mixture (8) of which the composition is contacting the plasma into the reaction chamber, adjusting the voltage and/or frequency provided by the generator circuit and/or the value of the adjustable inductor at the beginning or during the process to obtain optimal characteristics of reaction, and maintaining the substrate in the chamber for a sufficient time to obtain a layer of desired thickness on the surface. The mixture is decomposed and generates species to deposit a layer on the substrate. The process further comprises adjusting the voltage and/or the frequency provided by the circuit generator and/or the value of the inductor to enhance the harmonic production extending the time during which voltage remains greater than the value of maintaining the electric charge, and changing the position and/or the configuration of an electrode to obtain the optimal characteristics of the reaction. The harmonics is enhanced in the order of 3-5. The chamber is opened or closed at its two ends, and comprises an inlet area and an outlet area for the substrate. The substrate insulates and forms a dielectric barrier and electrode. The mixture is introduced into the reaction chamber in the form of a reactive gas, a liquid reagent, and a reactive powder. An independent claim is included for an installation for depositing a layer on a substrate.