| 摘要 |
PURPOSE: A gas injection device of an arrangement type deposition apparatus is provided to easily secure desire thickness of a deposition layer by improving storage capacity of gallium and offering a gallium source for enough time. CONSTITUTION: A plurality of gallium feed ports(110) is arranged in the inner side of a vacuum chamber(100). The plurality of gallium feed ports supplies gallium gas to substrates by turns. A plurality of nitrogen supply pipes is arranged at one side of the gallium feed port. The plurality of nitrogen supply pipes supplies ammonia gas. A plurality of carrier supply pipes is arranged at one side of the gallium feed port. The plurality of carrier supply pipes supplies hydrogen gas. A storing space of the gallium feed port is formed longer than a distance between the substrates. |
