发明名称 SEMICONDUCTOR MEMORY APPARATUS
摘要 PURPOSE: A semiconductor memory device is provided to improve data reliability by decreasing data sensing margin when a resistance value of a resistive memory cell is changed according to the change of a temperature. CONSTITUTION: A sensing current supply unit(200) increases an amount of sensing currents in proportion to a temperature rise and decreases the amount of sensing currents in proportion to a temperature fall when the sensing current is supplied to the resistive memory cell. A data sensing unit(400) senses a sensing voltage in a sensing node by the sensing current and outputs the sensing voltage as output data. A voltage clamping unit(500) is inserted between the sensing node and the resistive memory cell and clamps a voltage in the sensing node.
申请公布号 KR20120070406(A) 申请公布日期 2012.06.29
申请号 KR20100131948 申请日期 2010.12.21
申请人 SK HYNIX INC. 发明人 YOON, JUNG HYUK;SHIN, YOON JAE
分类号 G11C13/02;G11C5/14;G11C7/04 主分类号 G11C13/02
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