发明名称 |
SEMICONDUCTOR MEMORY APPARATUS |
摘要 |
PURPOSE: A semiconductor memory device is provided to improve data reliability by decreasing data sensing margin when a resistance value of a resistive memory cell is changed according to the change of a temperature. CONSTITUTION: A sensing current supply unit(200) increases an amount of sensing currents in proportion to a temperature rise and decreases the amount of sensing currents in proportion to a temperature fall when the sensing current is supplied to the resistive memory cell. A data sensing unit(400) senses a sensing voltage in a sensing node by the sensing current and outputs the sensing voltage as output data. A voltage clamping unit(500) is inserted between the sensing node and the resistive memory cell and clamps a voltage in the sensing node. |
申请公布号 |
KR20120070406(A) |
申请公布日期 |
2012.06.29 |
申请号 |
KR20100131948 |
申请日期 |
2010.12.21 |
申请人 |
SK HYNIX INC. |
发明人 |
YOON, JUNG HYUK;SHIN, YOON JAE |
分类号 |
G11C13/02;G11C5/14;G11C7/04 |
主分类号 |
G11C13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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