Method for forming through-hole in silicon substrate for electronic integrated circuit, involves removing portions of insulating and conductive layers formed on main surface of substrate by mechanochemical polishing

摘要

The method involves depositing an amorphous carbon layer (50) above a multilayer insulator (7) that is traversed by locally conductive contact regions (14) and covers a main surface of a silicon substrate (1). A recess is formed on the carbon layer, where the recess passes through the carbon layer, the multilayer insulator and the substrate. An insulating layer (56) and a conductive layer (58) are deposited to fill the recess. Portions of the insulating and conductive layers formed on the main surface of the substrate are removed by mechanochemical polishing to form interconnection levels. An independent claim is also included for an integrated circuit.