| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a long-wavelength semiconductor laser element using a semiconductor stacked structure composed of a group III nitride semiconductor. <P>SOLUTION: A semiconductor laser element has a semiconductor stacked structure including a substrate 1 and a group III nitride semiconductor stacked structure 2. The group III nitride semiconductor stacked structure 2 is composed of a group III nitride semiconductor having a semipolar plane as a crystal growth surface, and has a light-emitting layer 10 containing In, a p-type guide layer 17 disposed on one side of the light-emitting layer 10, an n-type guide layer 15 disposed on the other side of the light-emitting layer 10, a p-type cladding layer 18 disposed on the surface of the p-type guide layer 17 opposite to the surface on which the light-emitting layer 10 is provided, and an n-type cladding layer 14 disposed on the surface of the n-type guide layer 15 opposite to the surface on which the light-emitting layer 10 is provided. The group III nitride semiconductor stacked structure 2 includes a linear ridge 20 formed in parallel to a projection vector of the c-axis to the crystal growth surface and a pair of laser resonance surfaces 21 and 22 composed of cleavage planes perpendicular to the projection vector. <P>COPYRIGHT: (C)2012,JPO&INPIT |
