| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem in which although a magnetic body memory which employs spin injection magnetization reversal is reducible in write current by using a fine magnetic resistance element, a read current also needs to be made small so as to prevent data from being destroyed when read out and a reading operation may be delayed. <P>SOLUTION: After a word line (WL) is selected, a sense amplifier (SA) is activated to drive a first bit line (BLt0) to a first potential (VDD) and then to drive a second bit line (BLb0) to a second potential (VSS). A source line (SL0) is driven thereafter from the first potential to the second potential so as to perform rewriting operation in an antiparallel state and a parallel state on a time-division basis. <P>COPYRIGHT: (C)2012,JPO&INPIT |
