发明名称 SUBSTRATE PROCESSING DEVICE AND METHOD
摘要 A semiconductor processing device sprays a liquid chemical agent onto a film on a spinning semiconductor substrate. The spray nozzle is moved horizontally from a first upper position comparatively distant from the substrate to a second upper position closer to the substrate, then vertically downward to a lower position. All of these positions are higher than the substrate and none of them overlie the substrate. The spray nozzle is then moved horizontally to a spray position over the substrate and spraying begins. Any residual liquid chemical agent remaining at the outlet of the spray nozzle from the processing of a previous substrate drops off harmlessly at the end of the downward vertical motion instead of dropping onto the film on the substrate.
申请公布号 US2012162618(A1) 申请公布日期 2012.06.28
申请号 US201113332609 申请日期 2011.12.21
申请人 TOKUMARU MASARU;YAMAUCHI TOSHIKAZU;LAPIS SEMICONDUCTOR CO., LTD. 发明人 TOKUMARU MASARU;YAMAUCHI TOSHIKAZU
分类号 G03B27/32 主分类号 G03B27/32
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