发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
摘要 |
A substrate processing apparatus includes: a holding stage which includes a susceptor having a substrate holding surface on which a wafer is held and a focus ring holding surface on which a focus ring is held; an electrostatic chuck which electrostatically adsorbs a rear surface of the wafer to the substrate holding surface and electrostatically adsorbs a rear surface of the focus ring to the focus ring holding surface; and a heat transfer gas supplying mechanism, wherein the heat transfer gas supplying mechanism independently provides a first heat transfer gas supply unit supplying a first heat transfer gas to the rear surface of the substrate and a second heat transfer gas supply unit supplying a second heat transfer gas to the rear surface of the focus ring.
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申请公布号 |
US2012160808(A1) |
申请公布日期 |
2012.06.28 |
申请号 |
US201113332986 |
申请日期 |
2011.12.21 |
申请人 |
KIKUCHI EIICHIRO;NAGAYAMA NOBUYUKI;MIYAI TAKAHIRO;TOKYO ELECTRON LIMITED |
发明人 |
KIKUCHI EIICHIRO;NAGAYAMA NOBUYUKI;MIYAI TAKAHIRO |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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