| 摘要 |
In sophisticated transistors, a specifically designed semiconductor material, such as a strain-inducing semiconductor material, may be sequentially provided in the drain region and the source region, thereby enabling a significant degree of lateral extension of the grown semiconductor materials without jeopardizing mechanical integrity of the transistor during the processing thereof. For example, semiconductor devices having different drain and source sides may be provided on the basis of sequentially provided embedded semiconductor materials. |
