MONOLITHIC DARLINGTON WITH INTERMEDIATE BASE CONTACT

摘要

In one embodiment, a method includes forming a first pad for coupling to a first terminal of a first transistor of a monolithic darlington transistor configuration and forming a second pad for coupling to a first terminal of a second transistor of the monolithic darlington transistor configuration. The method then forms a third pad for coupling to an external component for the monolithic darlington transistor configuration. The third pad is coupled to a second terminal of the first transistor and a second terminal of the second transistor of the monolithic darlington transistor configuration.