发明名称 |
REDUCTION OF STORED CHARGE IN THE BASE REGION OF A BIPOLAR TRANSISTOR TO IMPROVE SWITCHING SPEED |
摘要 |
In one embodiment, a method includes forming a base region for a transistor using a base mask and forming a contact region to the base region. The contact region is formed in an area that is at least partially outside of the base mask. The method then forms an emitter region in a diffused base region. The base region diffuses outwardly to be formed under the contact region. |
申请公布号 |
WO2012085676(A1) |
申请公布日期 |
2012.06.28 |
申请号 |
WO2011IB03278 |
申请日期 |
2011.12.19 |
申请人 |
DIODES ZETEX SEMICONDUCTORS LIMITED;CASEY, DAVID, NEIL |
发明人 |
CASEY, DAVID, NEIL |
分类号 |
H01L29/10;H01L27/082;H01L29/66 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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