SIMULTANEOUS WAFER BONDING AND INTERCONNECT JOINING

摘要

PURPOSE: A method for simultaneously bonding and mutually connecting wafers is provided to minimize signal propagation delay by maintaining low impedance and a short distance. CONSTITUTION: A second element(200) comprises a main surface, a bond pad, and a dielectric layer(220). A thermal expansion coefficient of the second element is below 10 ppm/°C. The second element includes a plurality of active circuit elements. A first metal layer is arranged on the dielectric layer and the bond pad of a microelectronic element. A second metal layer(230) is arranged on the dielectric layer and the bond pad of the second element.