| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with high crystal quality and high light-extraction efficiency and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor light-emitting element comprises a first semiconductor layer including an n-type semiconductor layer, a second semiconductor layer including a p-type semiconductor layer, and a light-emitting portion provided between the first semiconductor layer and the second semiconductor layer. The light-emitting portion includes a plurality of barrier layers, and well layers provided between the plurality of barrier layers. The first semiconductor layer has first irregularities and second irregularities. The first irregularities are provided on a primary surface of the first semiconductor layer at the opposite side on which the light-emitting portion is provided. The second irregularities are provided on the bottom surfaces and the top surfaces of the first irregularities. The second irregularities have a smaller step than the step between the bottom surfaces and the top surfaces. <P>COPYRIGHT: (C)2012,JPO&INPIT |
