| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the light extraction efficiency in a semiconductor light-emitting element having a reflective layer under a pad electrode. <P>SOLUTION: A semiconductor light-emitting element 1 of the present invention having a semiconductor stacked structure including a light-emitting layer 12 sandwiched between an n-type semiconductor layer 11 and a p-type semiconductor layer 13 comprises: a first transparent electrode 14 formed on the p-type semiconductor layer 13; a reflective layer 15 that is formed on the first transparent electrode 14 and has a smaller area than the first transparent electrode 14; a second transparent electrode 16 formed on the first transparent electrode 14 so as to cover the reflective layer 15; and a p-pad electrode 17 formed on a region above the reflective layer 15 on the second transparent electrode 16. <P>COPYRIGHT: (C)2012,JPO&INPIT |
