| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for obtaining a nitride single crystal free from cracks with satisfactory reproducibility and with a high yield when a crystal is grown by a flux method using a surface-processed template substrate as a seed crystal. <P>SOLUTION: A seed crystal film composed of a group III metal nitride single crystal is formed on a substrate 1. At this time, a non-growth surface 1b that is not coated with the seed crystal film is formed. Then, a group III metal nitride single crystal is grown on the seed crystal film by a flux method. The substrate 1 includes an outer edge part 13 provided over the entire periphery along the outer edge of the substrate and a central part 12 provided inside the outer edge part 13. A plurality of belt-like parts 19 composed of the seed crystal film are arranged over the entire central part, and a plurality of separation parts 25 composed of the seed crystal film are arranged over the entire periphery of the outer edge part. The surface ratio of the seed crystal in the outer edge part 13 is lower than that in the central part 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
