| 摘要 |
A gas sensor manufacturing method including the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and a conducting line, the conducting line including a connecting arm connecting to the integrated circuit region, the trench is formed around the conducting line and excavated to the oxide layer for reducing power consumption of the heater circuit, the connecting arm reaches over a gap between the integrated circuit region and the outer region and electrically connects to the integrated circuit region; coating or imprinting a sensing material on the circuit region; and etching the carrier and the oxide layer to form a cavity to form a film structure suspended in the cavity by the cantilevered connecting arm. |
