Method for controlling crystallization of Hf-oxide layer from succeeding thermal treatment and method of barrier for suppressing impurities diffusion for from the same

摘要

PURPOSE: A hafnium oxide film crystallization control method and an impurity diffusion suppressing layer formation method are provided to improve capacitance by crystallization properties of hafnium oxide. CONSTITUTION: A hafnium oxide film is deposited on a III-V group compound semiconductor substrate. A subsequent NH3 gas heat treatment process is performed for crystallization of hafnium oxide. A III-V group compound is selected among gallium arsenide(GaAs), indium gallium arsenide, aluminum gallium arsenide, and indium phosphate. The NH3 gas heat treatment process is performed for 0.5 to 2 minutes under an NH3 atmosphere with a temperature range of 500 to 700°C.