| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to minimize the deterioration of a device due to plasma by removing a p-n-p junction structure or keeping it according to a device type and a plasma polarity. CONSTITUTION: A p-n-p junction structure(100) is formed in a semiconductor substrate(100a). A gate(110) is formed on the top side the semiconductor substrate in which the p-n-p junction structure is formed. A diode is formed by implanting an n type ion to the semiconductor substrate in the gate side. The gate and the diode are electrically connected. The p-n-p junction structure is removed from the semiconductor substrate. |
