| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device that can form the entire multilayer structure as thin as possible with excellent flatness at lower cost, and a semiconductor device manufactured by the method. <P>SOLUTION: In this manufacturing method, a pixel region PDR where a photoelectric conversion element PD is disposed, and a peripheral region PCR disposed around the pixel region PDR are formed within a semiconductor substrate SUB. On a main surface of the semiconductor substrate SUB, an uppermost wiring layer AL3 and a first interlayer insulation film II4 on the uppermost wiring layer AL3 are formed. An uppermost surface ISF of the first interlayer insulation film II4 is flattened. After the process of flattening the uppermost surface ISF, the uppermost surface ISF of the first interlayer insulation film II4 in the pixel region PDR is flat, and a step HP2 is formed on the uppermost surface ISF of the first interlayer insulation film II4 in the peripheral region PCR. <P>COPYRIGHT: (C)2012,JPO&INPIT |
