| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device such that a memory cell array is reducible in occupation area and a power source in use is reducible in capacity and occupation area. <P>SOLUTION: The semiconductor storage device having an open bit line type core architecture includes a plurality of array regions BK0-BK8,BK0', which each includes two redundant array blocks BK0, BK0' arranged at edge parts at both of the array region and having only a redundant word line WLrd, a plurality of real array blocks BK1-BK8 arranged alternately with a sense amplifier SA interposed between the two redundant array blocks, and having only a real word line WLr1, and power supply capacity control means of increasing the power supply capacity of an arbitrary first array region when performing redundant processing on the word line in which the real word line is replaced with the redundant word line in the first array region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
