SUBSTRATE STRUCTURE FOR HIGH-EFFICIENCY LIGHT EMITTING DIODES AND METHOD OF GROWING EPITAXIAL BASE-LAYERS THEREON

摘要

A substrate structure for use in a high-efficiency light emitting diode (LED) and a method of growing an epitaxial base-layer on the substrate are provided. The substrate structure includes a plurality of growth cells provided on one surface of the substrate, each growth cell for formation of a nucleation island which acts as a seed for growing an epitaxial layer, wherein each of a plurality of the growth cell is formed of a bottom surface, on which the nucleation island is formed, and sidewalls of a predetermined height extending upwardly and outwardly from a circumference of the bottom surface, and endpoints of the sidewalls are connected by sharp-pointed ridges, thereby resulting in a polygon.