发明名称 METHOD FOR MANUFACTURING REFLECTIVE MASK AND APPARATUS FOR MANUFACTURING REFLECTIVE MASK
摘要 PURPOSE: A method for manufacturing a reflective mask and an apparatus for manufacturing the reflective mask are provided to etch a reflective layer on a substrate by using gas containing chlorine and oxygen. CONSTITUTION: A reflective layer(202) is formed on the main surface of a substrate(201). An absorbent layer(204) is formed on the reflective layer. Pattern regions are formed on the absorbent layer. A light shielding region is formed to surround the pattern region of the absorbent layer and the reflective layer. The reflective layer is etched using gas containing chlorine and oxygen. The content of oxygen in the gas is between 5 vol% and 30 vol%, inclusively. The reflective layer includes a molybdenum-containing layer and a silicon-containing layer.
申请公布号 KR20120069552(A) 申请公布日期 2012.06.28
申请号 KR20110122519 申请日期 2011.11.22
申请人 SHIBAURA MECHATRONICS CORPORATION 发明人 YOSHIMORI TOMOAKI;KARYU MAKOTO;MOTOKAWA TAKEHARU;TAKAI KOSUKE;KASE YOSHIHISA
分类号 G03F1/52;G03F7/09;G03F7/26 主分类号 G03F1/52
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