| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high electron mobility transistor (HEMT) that is improved in switching characteristics and obtains normally-off characteristics. <P>SOLUTION: A HEMT 100 made up of a nitride semiconductor includes: a first layer 103 containing an n-type impurity or undoped; a second layer 105 provided on the first layer and having a band gap energy larger than that of the first layer; a third layer 106 provided on the second layer and containing a p-type impurity; and a fourth layer 107 provided on the third layer and having a band gap energy decreasing toward an upper side from a lower side. <P>COPYRIGHT: (C)2012,JPO&INPIT |
