| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor device with reduced occurrence of, for example, breakage due to high withstand voltage. <P>SOLUTION: A semiconductor device comprises: a first semiconductor layer 12 formed on a substrate; a second semiconductor layer 14 formed above the first semiconductor layer; a gate recess 22 formed by removing at least a portion or a whole of the second semiconductor layer of a predetermined region; an insulating film 31 formed on the gate recess and the second semiconductor layer; a gate electrode 32 formed on the gate recess via the insulating film; and a source electrode 33 and a drain electrode 34 formed on the first semiconductor layer or the second semiconductor layer. In the bottom of the gate recess, a center portion 23a is higher than a peripheral portion 23b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
