| 发明名称 |
METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION |
| 摘要 |
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
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| 申请公布号 |
US2012161287(A1) |
申请公布日期 |
2012.06.28 |
| 申请号 |
US201213351514 |
申请日期 |
2012.01.17 |
| 申请人 |
IZA MICHAEL;BAKER TROY J.;HASKELL BENJAMIN A.;DENBAARS STEVEN P.;NAKAMURA SHUJI;JAPAN SCIENCE AND TECHNOLOGY AGENCY;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
IZA MICHAEL;BAKER TROY J.;HASKELL BENJAMIN A.;DENBAARS STEVEN P.;NAKAMURA SHUJI |
| 分类号 |
H01L29/12;C30B25/02;C30B25/18 |
主分类号 |
H01L29/12 |
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