PROCESS FOR MANUFACTURE OF SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

The ion implantation through a first opening formed on a mask layer (31) is carried out, thereby forming a first impurity region (123). A spacer layer (32) is deposited on an etching stop layer having a mask layer (31) provided therein, thereby forming a mask part (30) having the mask layer (31) and the spacer layer (32). The spacer layer (32) is etched anisotropically, thereby forming, on the mask part (30), a second opening (P2) that is surrounded by a second side wall. The ion implantation through the second opening (P2) is carried out, thereby forming a second impurity region (124). In the second side wall, the angle (AW) against the surface (SO) is 90° ± 10° in an area having a height (HT) that is the same as the second depth (D2). This configuration enables the improvement in accuracy of the spreading of the impurity regions.