发明名称 |
TRENCH EMBEDDING METHOD AND FILM-FORMING APPARATUS |
摘要 |
A trench embedding method includes forming an oxidization barrier film on a trench; forming an expandable film on the oxidization barrier film; embedding an embedding material that contracts by being fired on the trench; and firing the embedding material, wherein the forming of the oxidization barrier film includes: forming a first seed layer on the trench by supplying an aminosilane-based gas; and forming a silicon nitride film on the first seed layer, wherein the forming of the expandable film includes: forming a second seed layer on the silicon nitride film by supplying an aminosilane-based gas; and forming a silicon film on the second seed layer. |
申请公布号 |
US2012164842(A1) |
申请公布日期 |
2012.06.28 |
申请号 |
US201113334352 |
申请日期 |
2011.12.22 |
申请人 |
WATANABE MASAHISA;OKADA MITSUHIRO;TOKYO ELECTRON LIMITED |
发明人 |
WATANABE MASAHISA;OKADA MITSUHIRO |
分类号 |
H01L21/31;C23C16/42 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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