发明名称 Method of Forming a Semiconductor Device Comprising eFuses of Increased Programming Window
摘要 In a sophisticated semiconductor device, a semiconductor-based electronic fuse may be formed in a bulk configuration, wherein the design and thus the configuration of the contact areas and the fuse region provide a wide programming window in terms of programming voltages and duration of the corresponding programming pulses.
申请公布号 US2012164799(A1) 申请公布日期 2012.06.28
申请号 US201113209128 申请日期 2011.08.12
申请人 KURZ ANDREAS;SCHWAN CHRISTOPH;FIMMEL DIRK;GLOBALFOUNDRIES INC. 发明人 KURZ ANDREAS;SCHWAN CHRISTOPH;FIMMEL DIRK
分类号 H01L21/82 主分类号 H01L21/82
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