发明名称 |
Method of Forming a Semiconductor Device Comprising eFuses of Increased Programming Window |
摘要 |
In a sophisticated semiconductor device, a semiconductor-based electronic fuse may be formed in a bulk configuration, wherein the design and thus the configuration of the contact areas and the fuse region provide a wide programming window in terms of programming voltages and duration of the corresponding programming pulses. |
申请公布号 |
US2012164799(A1) |
申请公布日期 |
2012.06.28 |
申请号 |
US201113209128 |
申请日期 |
2011.08.12 |
申请人 |
KURZ ANDREAS;SCHWAN CHRISTOPH;FIMMEL DIRK;GLOBALFOUNDRIES INC. |
发明人 |
KURZ ANDREAS;SCHWAN CHRISTOPH;FIMMEL DIRK |
分类号 |
H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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