发明名称 PRODUCTION OF POLYCRYSTALLINE SILICON IN SUBSTANTIALLY CLOSED-LOOP PROCESSES THAT INVOLVE DISPROPORTIONATION OPERATIONS
摘要 <p>Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.</p>
申请公布号 WO2012087795(A1) 申请公布日期 2012.06.28
申请号 WO2011US65399 申请日期 2011.12.16
申请人 MEMC ELECTRONIC MATERIALS, INC.;GUPTA, PUNEET;HUANG, YUE;BHUSARAPU, SATISH 发明人 GUPTA, PUNEET;HUANG, YUE;BHUSARAPU, SATISH
分类号 B01D3/00;B01J8/18;B01J19/18;C01B33/02;C01B33/023;C01B33/029;C01B33/107 主分类号 B01D3/00
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