FIELD-EFFECT TRANSISTOR, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE INCLUDING SAME

摘要

The purpose of the present invention is to provide a field-effect transistor having high mobility. The present invention relates to a bottom-contact field-effect transistor including: a substrate; a source electrode (3) and a drain electrode (4) that are formed on the substrate and that are each made of an inexpensive metal; and an organic semiconductor layer (6) having an annulene structure. The field-effect transistor is characterized in that there is no oxide film on the surface(s) of the source electrode (3) and/or the drain electrode (4) that come(s) into contact with the organic semiconductor layer (6). The field-effect transistor is produced according to a method for producing a bottom-contact field-effect transistor involving a step of forming, on a substrate, a source electrode (3) and a drain electrode (4) that are each made of a metal, and a step of forming an organic semiconductor layer (6) having an annulene structure, the method being characterized by performing an oxide-film removal process of removing the oxide film (5) from the surface(s) of the source electrode (3) and/or the drain electrode (4) after forming the electrodes (3, 4).