| 摘要 |
PURPOSE: A magnetic random access memory device, and a program method and a verification method for a reference cell are provided to improve an operation speed by simultaneously recording data in a pair of reference cells. CONSTITUTION: A reference cell array includes a pair of reference magnetic memory cells. A write driver(130) programs data in a memory cell array and a reference cell array. A first switching unit(160) forms a current path from a bit line connected to the write driver to a source line connected to the write driver via the reference cell array or a current path from the source line connected to the write driver to the bit line connected to the write driver via the reference cell array. |
