| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide for the semiconductor layer of a thin film transistor which ensures excellent switching characteristics and stress tolerance of a thin film transistor when an oxide semiconductor is used in the semiconductor layer of a thin film transistor. <P>SOLUTION: The oxide for the semiconductor layer of a thin film transistor is used in the semiconductor layer of a thin film transistor. The oxide contains at least one kind of element selected from a group consisting of In, Ga, and Zn, and at least one kind of element selected from a group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta, and W. <P>COPYRIGHT: (C)2012,JPO&INPIT |
