| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device including a trench gate structure having high reliability and an improved switching speed. <P>SOLUTION: A manufacturing method of a semiconductor device including a trench gate structure comprises: a step of forming a trench on a silicon substrate; a step of filling the trench with a doped polysilicon; a step of etching the doped polysilicon and leaving a part of the doped polysilicon in the bottom of the trench; a step of forming a silicone oxide film by oxidizing the doped polysilicon remaining in the bottom of the trench; and step of forming a gate insulating film on an inner peripheral surface of the trench in which the silicone oxide film was left in the bottom of the trench. <P>COPYRIGHT: (C)2012,JPO&INPIT |
