| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrostatic chucking method capable of heating in short time and electrostatically chucking an insulating substrate such as a glass substrate in plasma. <P>SOLUTION: In a plasma processing apparatus with an electrostatic chucking mechanism, an insulating substrate is mounted on the electrostatic chucking mechanism and plasma is formed in a space facing the insulating substrate by applying high-frequency power. The plasma makes it possible to rapidly heating only the substrate to be processed without unnecessarily heating the electrostatic chucking mechanism, thus electrostatically chucking the insulating substrate in short time. <P>COPYRIGHT: (C)2012,JPO&INPIT |
