| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thermal infrared detector which facilitates wet etching of a substrate and may efficiently absorb infrared rays over a wide wavelength region. <P>SOLUTION: An infrared absorption film 2 comprises a first layer 21 containing TiN and a second layer containing an Si-based compound, thereby converting energy of infrared ray made incident from the side of the second layer 22 to heat. TiN is high in absorption rate of infrared ray in a wavelength range shorter than 8 μm but is high in reflection rate of infrared ray in a wavelength range longer than 8 μm. Therefore, if an Si-based compound layer excellent in absorption rate of infrared ray in a longer wavelength range is laminated on a TiN layer, infrared ray in a wavelength range lower in absorption rate on the TiN layer may be suitably absorbed on the Si-based compound layer and infrared ray transmitting the Si-based compound layer may be reflected on an interface of the TiN layer and returned to the Si-based compound layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
