| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pressure sensor susceptible to little offset drift. <P>SOLUTION: A pressure sensor comprises a semiconductor substrate 3 having a rectangular diaphragm 31 formed of a p-type semiconductor and etched on the under-face, four diffusion areas 10a to 10d formed of an n-type semiconductor and near the respective middle points of the four sides of the diaphragm 31 over the upper face of the semiconductor substrate 3, and four gauge resistances 4a to 4d formed of a p-type semiconductor and respectively over the four diffusion areas 10a to 10d to constitute a Wheatstone bridge over the upper face of the semiconductor substrate 3, each of the four diffusion areas 10a to 10d and of the four gauge resistances 4a to 4d being so connected to a potential as to equalize the reverse bias voltage between each diffusion area-gauge resistance pair. <P>COPYRIGHT: (C)2012,JPO&INPIT |
