| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state image sensor in which a leak current generated in a storage part is minimized. <P>SOLUTION: The solid state image sensor comprises a plurality of pixel circuits 1a, a row signal line 21, and a plurality of unit storage circuits 2a. Each of the plurality of unit storage circuits 2a has a write transistor 31, a storage capacity 32, an n-type first diffusion region 143, an insulating isolation region 141 formed while being separated by a predetermined distance from the first diffusion region 143 and is contiguous to the source or drain region of the write transistor 31, and a p-type second diffusion region 142 formed around the insulating isolation region 141 while being separated by a predetermined distance from the first diffusion region 143. At least on the surface of the second diffusion region 142, a metal silicide layer is not formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
