发明名称 THERMAL OXIDATION OF SINGLE CRYSTAL ALUMINUM ANTIMONIDE AND MATERIALS HAVING THE SAME
摘要 In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.
申请公布号 US2012161288(A1) 申请公布日期 2012.06.28
申请号 US20100976994 申请日期 2010.12.22
申请人 SHEROHMAN JOHN WILLIAM;YEE JICK HONG;COOMBS, III ARTHUR WILLIAM;J. WU KUANG JEN;LAWRENCE LIVERMORE NATIONAL SECURITY, LLC 发明人 SHEROHMAN JOHN WILLIAM;YEE JICK HONG;COOMBS, III ARTHUR WILLIAM;J. WU KUANG JEN
分类号 H01L29/20;H01L21/314 主分类号 H01L29/20
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